STFI26N60M2 - STMicroelectronics

STFI26N60M2 N-channel Power MOSFET

- O This device is an N-channel Power MOSFET developed using MDmesh M2 t(s) S(3) AM15572v1_no_tab technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it csuitable for the most demanding high efficiency converters. solete Produ Product status .

Features

Order code VDS RDS(on) max. ID t(s) 1 23 c I2PAKFP u (TO-281) Prod D(2) STFI26N60M2 650 V 165 mΩ 20 A
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected Applications te
• Switching applications le G(1)
• LCC converters, resonant converters bso Description - O This device is an N-channel Power MOSFET developed using MDmesh M2 t(s) S(3) AM15572v1_no_tab technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rend.