STFI11N60M2-EP - STMicroelectronics

STFI11N60M2-EP N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an S(3) AM15572v1_no_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very hig.

Features

1 23 I 2 PAKFP (TO-281) D(2) Order code VDS RDS(on) max. STFI11N60M2-EP 600 V 0.595 Ω
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected ID 7.5 A Applications
• Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an S(3) AM15572v1_no_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-of.