STF8236 - SamHop Microelectronics

STF8236 Dual N-Channel Enhancement Mode Field Effect Transistor

STF8236Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 22.0 @ VGS=4.5V 22.5 @ VGS=4.0V 6A 23.0 @ VGS=3.7V 25.0 @ VGS=3.1V 29.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protect.

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. PIN 1 S1 S1 G1 D1/D2 S2 S2 G2 DFN 2X2 Bottom Drain Contact (D1/D2) G1 3 4 G2 S1 2 5 S2 S1 1 6 S2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol VDS VGS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous c -Pulsed a c TA=25°C TA=70°C PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 20 ±12 6 4.8.