STF8233 - SamHop Microelectronics

STF8233 Dual N-Channel Enhancement Mode Field Effect Transistor

Green Product STF8233 Ver 2.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 7.2 @ VGS=4.5V 7.5 @ VGS=4.0V 20V 11A 8.2 @ VGS=3.7V 9.0 @ VGS=3.1V 10.2 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protec.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) G1 3 S1 2 T DF N 2X3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 11 8.8 70 a Units V V A A A W W °C Maximum Power Dissipation 1.56 1.00 -55 to 150 Operating Junction and Storage Temperature Range THERM.