This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. Product status link STF80N240K6 Product.
Order code
VDS
RDS(on) max.
ID
STF80N240K6
800 V
220 mΩ
16 A
3 2 1 TO-220FP D(2)
•
Worldwide best RDS(on) x area
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
G(1)
• Flyback converter
• Adapters for tablets, notebook and AIO
• LED lighting
S(3)
AM15572v1_no_tab
Description
This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and.
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