STF32NM50N - STMicroelectronics

STF32NM50N N-channel MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $OR4!" ' 3.

Features

TAB Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N
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■ VDS RDS(on) max. ID PTOT 190 W 35 W 190 W 190 W 2 3 1 3 1 2 D²PAK TAB 500 V 0.13 Ω TO-220FP 22 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 3 1 2 2 1 3 TO-247 Applications
■ Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the wo.