Green Product STF2458 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 9.5 @ VGS=4.5V 10.2 @ VGS=4.0V 24V 10A 10.4 @ VGS=3.7V 11.5 @ VGS=3.1V 14.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Pro.
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact G1 S1 T DF N 2X3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 24 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 10.0 8.0 60 a Units V V A A A W W °C Maximum Power Dissipation 1.56 1.00 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STF2454 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
2 | STF2454A |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
3 | STF2455 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | STF2456 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
5 | STF2458A |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
6 | STF2459A |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
7 | STF24N60DM2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STF24N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STF24N60M6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STF24N65M2 |
STMicroelectronics |
N-channel MOSFET | |
11 | STF24NF12 |
STMicroelectronics |
N-channel MOSFET | |
12 | STF24NM60N |
STMicroelectronics |
N-channel MOSFET |