teThis MOSFET is the latest development of leSTMicroelectronics unique “Single Feature oSize™” strip-based process. The resulting bstransistor shows extremely high packing density for low on-resistance, rugged avalance - Ocharacteristics and less critical alignment steps )therefore a remarkable manufacturing t(sreproducibility. 3 2 1 TO-220FP Internal schem.
Type
VDSS
RDS(on)
ID
STF24NF12
120V
<0.077Ω 24A
)
■ Exceptional dv/dt capability t(s
■ Low gate charge at 100°C c
■ Application oriented characterization du
■ 100% avalanche tested ProDescription teThis MOSFET is the latest development of leSTMicroelectronics unique “Single Feature oSize™” strip-based process. The resulting bstransistor shows extremely high packing density
for low on-resistance, rugged avalance
- Ocharacteristics and less critical alignment steps )therefore a remarkable manufacturing t(sreproducibility.
3 2 1
TO-220FP
Internal schematic diagram
roducApplications Obsolete.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STF24N60DM2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STF24N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STF24N60M6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STF24N65M2 |
STMicroelectronics |
N-channel MOSFET | |
5 | STF24NM60N |
STMicroelectronics |
N-channel MOSFET | |
6 | STF24NM60N |
INCHANGE |
N-Channel MOSFET | |
7 | STF24NM65N |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STF24NM65N |
INCHANGE |
N-Channel MOSFET | |
9 | STF2454 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
10 | STF2454A |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
11 | STF2455 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
12 | STF2456 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor |