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STE110NA20 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STE110NA20 V DSS 200 V R DS(on) < 0.019 Ω ID 110 A s s s s s s s s s TYPICAL RDS(on) = 0.015 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREM.
Insulation Withhstand Voltage (AC-RMS)
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Value 200 200 ± 30 110 73 440 450 3.6 -55 to 150 150 2500
Unit V V V A A A W W/ o C
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C C
V
(
•) Pulse width limited by safe operating area
March 1996
1/8
STE110NA20
THERMAL DATA
R thj-case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.27 0.05
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C/W C/W
AVALANCHE CHARACTERISTICS
Symbol I AR E AS EAR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD.
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