Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate char.
ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 ± 30 7 5 28 55 0.44 5.5
– 65 to 150 150
(1) ISD≤ 7A, di/dt≤200 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX
Unit V V V A A A W W/°C V/ns °C °C
(
•)Pulse width limited by safe operating area
July 2002
1/10
STD7NB20 / STD7NB20-1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD7NB20 |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STD7N52DK3 |
ST Microelectronics |
Power MOSFET | |
3 | STD7N52K3 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STD7N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STD7N60M6 |
STMicroelectronics |
N-Channel MOSFET | |
6 | STD7N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STD7N65M6 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STD7N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STD7N80K5 |
INCHANGE |
N-Channel MOSFET | |
10 | STD7N90K5 |
STMicroelectronics |
N-Channel Power MOSFET | |
11 | STD7N95K5AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
12 | STD7NK30Z |
STMicroelectronics |
N-CHANNEL MOSFET |