STD660 - SamHop Microelectronics

STD660 N-Channel Logic Level Enhancement Mode Field Effect Transistor

Green Product STU/D660 Ver 2.0 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 90V ID 5A RDS(ON) (mΩ) Max 724 1014 @VGS=10V @VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. ESD Protected. D G S G D G S STU SERIES TO-252.

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. ESD Protected. D G S G D G S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Limit 90 ±20 TC=25°C TC=70°C 5 4 14 4 TC=25°C TC=70°C 42 27 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R .