STD601S - SamHop

STD601S P-Channel Logic Level Enhancement Mode Field Effect Transistor

Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max -60V -16.5A 78 @ VGS=-10V 113 @ VGS=-4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S STU SERIES TO - 252AA( D- PAK .

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TC=25°C TC=70°C IDM -Pulsed b EAS Sigle Pulse Avalanche Energy d PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal .