STD60NF3LL - ST Microelectronics

STD60NF3LL N-CHANNEL POWER MOSFET

This application specific Power Mosfet is the third genaration of STMicroelectronics unique “Single INTERNAL SCHEMATIC DIAGRAM Feature Size ™” strip-based process. The resulting transistor shows the best trade-off between onresistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction.

Features

VGS ID ID IDM (l) PTOT EAS (1) Tstg Tj April 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 30 30 ± 16 60 43 240 100 0.67 700
  – 55 to 175 (1) Starting T j=25°C, ID=30A, VDD=27.5V Unit V V V A A A W W/°C mJ °C (q) Pulse width limited by safe operating area 1/9 DataSheet4U.com DataSheet 4 U .com www.DataSh.