STD60NF06 - ST Microelectronics

STD60NF06 N-CHANNEL POWER MOSFET

This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and INTERNAL SCHEMATIC DIAGRAM gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any applicatio.

Features

rain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 60 60 ± 20 60 42 240 110 0.73 4
  – 55 to 175 (1) I SD≤ 60A, di/dt≤200 A/µs, VDD≤ 24V, Tj≤TjMAX Unit V V V A A A W W/°C V/ns °C (q) Pulse width limited by safe operating area October 2002 1/9 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STD60NF06 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-.