S(3) AM01475v1_noZen This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. Product status link.
TAB
23 1 DPAK
D(2, TAB)
Order code
VDS at TJ max.
RDS(on) max.
ID
STD18N55M5
600 V
192 mΩ
16 A
•
Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
Applications
G(1)
• Switching applications
Description
S(3)
AM01475v1_noZen
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal
layout. The resulting product offers extremely low on-resistance, making it particularly
suitable for applications requiring high p.
Isc N-Channel MOSFET Transistor STD18N55M5 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge.
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