This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driv.
Order code
VDS
RDS(on) max.
ID
STD12NF06T4
60 V
0.1 Ω
12 A
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
Applications
• Switching applications
PTOT 30 W
G(1) S(3)
AM01475v1_noZen
Description
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD12NF06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STD12NF06L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STD12NF06L-1 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STD12NF06LAG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
5 | STD12NF06LT4 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
6 | STD12N05 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STD12N05L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STD12N06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
9 | STD12N06L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STD12N10L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STD12N50DM2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
12 | STD12N50M2 |
STMicroelectronics |
N-Channel Power MOSFET |