STD12N06L - ST Microelectronics

STD12N06L N-CHANNEL POWER MOSFET

STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD12N05L STD12N06L s s s s s s s s V DSS 50 V 60 V R DS( on) < 0.15 Ω < 0.15 Ω ID 12 A 12 A s s TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175oC OPERAT.

Features

Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value STD12N06L 60 60 ± 15 12 8 48 45 0.3 -65 to 175 175 Unit 50 50 V V V A A A W W/o C o o C C (
•) Pulse width limited by safe operating area November 1996 1/10 STD12N05L/STD12N06L THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance .