isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drai.
·Drain Current ID= 8.5A@ TC=25℃
·Drain Source Voltage-
: VDSS=650V(Min)
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current-continuous@ TC=25℃
8.5
A
IDM
Pulse Drain Current
34
A
Ptot
Total Dissipation@TC=25℃
70
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHA.
MDmesh V is a revolutionary Power MOSFET technology, which combines an innovative proprietary vertical process with the .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD12N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STD12N60DM2AG |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STD12N60M2 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STD12N05 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STD12N05L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STD12N06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STD12N06L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STD12N10L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
9 | STD12N50DM2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STD12N50M2 |
STMicroelectronics |
N-Channel Power MOSFET | |
11 | STD12NE06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
12 | STD12NE06L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |