STC2201 - SamHop Microelectronics

STC2201 P-Channel Enhancement Mode Field Effect Transistor

S amHop Microelectronics C orp. S T C 2201 Mar 15 2005 ver1.2 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -2A R DS (ON) S uper high dense cell design for low R DS (ON ). 145 @ V G S = -4.5V 195 @ V G S = -2.5V R ugged and reliable. S OT-323 package. D S OT-323 D S G G S AB.

Features

age Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -2.0A V GS = -2.5V, ID = -1.0A V DS = -5V, V GS = -4.5V V DS = -5V, ID = -2.0A Min Typ C Max Unit -20 1 100 -0.5 -0.8 -1.5 120 170 -5 6 216 55 28 145 195 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Inpu.