The STC20DE90HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC20DE90HV is designed for use in power supply forward converter and three-phase power factor corrector applications. Internal schematic diagrams Applications ■ ■ SM.
Table 1.
VCS(ON) 1.2 V
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General features
IC 20 A RCS(ON) 0.06 Ω
Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 900 V Very low CISS driven by RG = 47 Ω In compliance with the 2002/93/EC European Directive
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TO247-4L HV
Description
The STC20DE90HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC20DE90HV is designed for use in power supply forward converter and three-phase power factor corrector applications.
Int.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STC20DE90HP |
ST Microelectronics |
Hybrid Emitter Switched Bipolar Transistor | |
2 | STC201F |
AUK |
NPN Silicon Transistor | |
3 | STC2073D |
AUK |
NPN Silicon Transistor | |
4 | STC2073F |
AUK |
NPN Silicon Transistor | |
5 | STC2073L |
AUK |
NPN Silicon Transistor | |
6 | STC2073Q |
AUK |
NPN Silicon Transistor | |
7 | STC2200 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
8 | STC2201 |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor | |
9 | STC221F |
KODENSHI |
NPN Silicon Transistor | |
10 | STC2222AN |
AUK |
NPN Silicon Transistor | |
11 | STC2222N |
AUK |
NPN Silicon Transistor | |
12 | STC2A16DRG |
ETC |
(STCxxx) LCD Display |