STC08IE150HV - ST Microelectronics

STC08IE150HV Emitter Switched Bipolar Transistor

The STC08IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies. Order Codes Part Number STC08IE150HV Marking C08IE150HV Package TO247-4LHV Packaging TUBE December 2006 Rev 2 1/7 www.st.com 7 This is preliminary informa.

Features

VCS(ON) 0.8 V
■ PRELIMINARY DATA IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/EC European Directive
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■ 1 23 4 TO247-4LHV Applications
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■ Aux SMPS for three phase mains Sepic PFC Internal Schematic Diagram Description The STC08IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. i.