STC08IE120HV - ST Microelectronics

STC08IE120HV Emitter Switched Bipolar Transistor

The STC08IE120HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. Order codes Part Number STC08IE120HV Marking C08IE120HV Package TO247-4L HV Packaging Tube January 2007 Rev 3 1/11 www.st.com 11 STC08IE120HV Contents 1.

Features

VCS(ON) 0.8 V
■ IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time
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■ 1 23 4 TO247-4L HV Applications
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■ Internal schematic diagrams Flyback / forward SMPS Sepic PFC Description The STC08IE120HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. Order codes Part Number ST.