Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB21NM60ND ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=125℃
Drain Current-Single Pulsed
±25
17 10
68
PD
Total Dissipation @TC=25℃
140
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CH.
STB21NM60ND - STMicroelectronics
6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STB21NM60N |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 2 | STB21NM60N-1 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 3 | STB21NM50N |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 4 | STB21NM50N-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | STB21N65M5 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 6 | STB21N65M5 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | STB21N90K5 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 8 | STB21NK50Z |
STMicroelectronics |
N-channel MOSFET |
|
| 9 | STB210NF02 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 10 | STB210NF02-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 11 | STB200N04 |
STMicroelectronics |
Power MOSFET |
|
| 12 | STB200N4F3 |
STMicroelectronics |
N-channel Power MOSFET |
|