STB155N3LH6 - STMicroelectronics

STB155N3LH6 N-channel MOSFET

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram $4!"OR ' Table 1. Device summary Order codes STB155N3LH6 STD155N3LH6 M.

Features

Order codes STB155N3LH6 STD155N3LH6 VDSS 30 V RDS(on) max 3.0 mΩ 1. Current limited by package
■ 100% avalanche tested
■ Logic level drive ID(1) PTOT 80 A 110 W Applications
■ Switching applications
■ Automotive Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram $4!"OR ' Table 1. Device summary Order codes STB155N3LH6 STD155N3LH6 Marking 1.