STB15N25 - STMicroelectronics

STB15N25 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STB15N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB15N25 s s s s s s s s V DSS 250 V R DS(on) < 0.25 Ω ID 15 A s s TYPICAL RDS(on) = 0.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE LOW LEAKAGE CURRENT APPLICATION ORIENTED CHARACTERIZATION T.

Features

= 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 250 250 ± 20 15 10 60 125 1 -65 to 150 150 Unit V V V A A A W W/ o C o o C C (
•) Pulse width limited by safe operating area March 1996 1/6 Free Datasheet http://www.datasheet4u.com/ STB15N25 THERMAL DATA R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.