ST50V10200 - STMicroelectronics

ST50V10200 RF power LDMOS transistor

The ST50V10200 is a common-source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats. Product status link ST50V10200 Product summary Order code ST50V10200 Marking S.

Features

Order code FREQ VDD POUT (typ.) Gain ST50V10200 1000 MHz 50 V 200 W 18 dB
• High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate/source voltage range
• In compliance with the European Directive 2002/95/EC ND 60% Applications
• Broadband communications
• Industrial, scientific and medical (ISM)
• Avionics Description The ST50V10200 is a common-source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used .