ST50V10100 - STMicroelectronics

ST50V10100 RF Power LDMOS transistor

The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in class A/AB and C for all typical modulation formats. Product status link ST50V10100 Product summary Order code ST50V10100 Marking ST.

Features

Order code FREQ VDD POUT (typ.) Gain ST50V10100 1000 MHz 50 V 100 W 18 dB
• High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate/source voltage range
• In compliance with the European Directive 2002/95/EC ND 60% Applications
• Industrial, scientific and medical from HF to 1.5 GHz
• Avionics Description The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in class A/AB.