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Press Pack IEGT Silicon N-Channel IEGT ST1000GXH35 1. Applications • Electric power transmission and distribution • Motor Controllers • High-Power Switching 2. Features (1) High reliability due to hermetic sealing structure. (2) Double side cooling type. 3. Packaging and Internal Circuit ST1000GXH35 ©2023-2024 1 Toshiba Electronic Devices & Storage Corpo.
(1) High reliability due to hermetic sealing structure. (2) Double side cooling type.
3. Packaging and Internal Circuit
ST1000GXH35
©2023-2024
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2024-02
2024-03-19 Rev.1.0
ST1000GXH35
4. Absolute Maximum Ratings (Note) (Tc = 25
�, unless otherwise specified)
Characteristics
Symbol Note
Test Condition
Rating
Unit
Collector-emitter voltage
VCES
4500
V
Gate-emitter voltage
VGES
±20
V
Collector current (DC)
IC
Tf = 108
�
1000
A
Collector current (pulsed)
ICP (Note 1)
2000
A
Diode forward c.
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|---|---|---|---|---|
| 1 | ST1000-30T3MI |
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| 2 | ST1000C |
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| 3 | ST1000C12K |
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| 4 | ST1000C16K |
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| 5 | ST1000C18K |
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| 6 | ST1000C20K |
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| 7 | ST1000C22K |
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| 8 | ST1000C24K |
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| 9 | ST1000C26K |
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| 10 | ST1000K |
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| 11 | ST100-125T3MI |
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| 12 | ST100-30TMI |
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|