ST1000GXH35 |
Part Number | ST1000GXH35 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | Press Pack IEGT Silicon N-Channel IEGT ST1000GXH35 1. Applications • Electric power transmission and distribution • Motor Controllers • High-Power Switching 2. Features (1) High reliability due to her... |
Features |
(1) High reliability due to hermetic sealing structure. (2) Double side cooling type.
3. Packaging and Internal Circuit
ST1000GXH35
©2023-2024
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2024-02
2024-03-19 Rev.1.0
ST1000GXH35
4. Absolute Maximum Ratings (Note) (Tc = 25 �, unless otherwise specified)
Characteristics
Symbol Note
Test Condition
Rating
Unit
Collector-emitter voltage
VCES
4500
V
Gate-emitter voltage
VGES
±20
V
Collector current (DC)
IC
Tf = 108 �
1000
A
Collector current (pulsed)
ICP (Note 1)
2000
A
Diode forward c... |
Document |
ST1000GXH35 Data Sheet
PDF 614.18KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ST1000-30T3MI |
Vishay |
Wet Tantalum Capacitors | |
2 | ST1000C |
International Rectifier |
(ST1000C-K Series) PHASE CONTROL THYRISTORS | |
3 | ST1000C12K |
Vishay Siliconix |
(ST1000CxxK) Phase Control Thyristors | |
4 | ST1000C16K |
Vishay Siliconix |
(ST1000CxxK) Phase Control Thyristors | |
5 | ST1000C18K |
Vishay Siliconix |
(ST1000CxxK) Phase Control Thyristors |