ST1000GXH35 Toshiba Silicon N-Channel IEGT Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

ST1000GXH35

Toshiba
ST1000GXH35
ST1000GXH35 ST1000GXH35
zoom Click to view a larger image
Part Number ST1000GXH35
Manufacturer Toshiba (https://www.toshiba.com/)
Description Press Pack IEGT Silicon N-Channel IEGT ST1000GXH35 1. Applications • Electric power transmission and distribution • Motor Controllers • High-Power Switching 2. Features (1) High reliability due to her...
Features (1) High reliability due to hermetic sealing structure. (2) Double side cooling type. 3. Packaging and Internal Circuit ST1000GXH35 ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-02 2024-03-19 Rev.1.0 ST1000GXH35 4. Absolute Maximum Ratings (Note) (Tc = 25 �, unless otherwise specified) Characteristics Symbol Note Test Condition Rating Unit Collector-emitter voltage VCES 4500 V Gate-emitter voltage VGES ±20 V Collector current (DC) IC Tf = 108 � 1000 A Collector current (pulsed) ICP (Note 1) 2000 A Diode forward c...

Document Datasheet ST1000GXH35 Data Sheet
PDF 614.18KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 ST1000-30T3MI
Vishay
Wet Tantalum Capacitors Datasheet
2 ST1000C
International Rectifier
(ST1000C-K Series) PHASE CONTROL THYRISTORS Datasheet
3 ST1000C12K
Vishay Siliconix
(ST1000CxxK) Phase Control Thyristors Datasheet
4 ST1000C16K
Vishay Siliconix
(ST1000CxxK) Phase Control Thyristors Datasheet
5 ST1000C18K
Vishay Siliconix
(ST1000CxxK) Phase Control Thyristors Datasheet
More datasheet from Toshiba



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact