SST6601-C - SeCoS

SST6601-C N And P-Channel Enhancement Mode Power MOSFET

The SST6601-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SST6601-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-26 A E L FEATURES Advanced High Cell Density Tre.

Features

Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 6601 = Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SST6601-C Lead (Pb)-free and Halogen-free B F C H DG K J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.30 MAX. 1.90 REF. 0.25 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. TOP VIEW ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current .