SST6301K - SeCoS

SST6301K N-Channel Enhancement Mode Power Mos.FET

0.37Ref. 0.20 0.60 Ref. 2.60 3.00 The SST6301K utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SST6301K is universally used for all commercial-industrial applications. 0.30 0.55 0.95 Ref. 2.70 3.10 0~0.1 0.25 1.40 1.80 0 o 10 o 1.20Ref. Features * RoHS Compliant.

Features

* RoHS Compliant
* Simple Drive Requirement
* Small Package Outline G1 D1 D2 G2 Dimensions in millimeters D1 6 S1 5 D2 4 Date Code 301E S1 S2 1 G1 2 S2 3 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ±16 640 500 950 1.2 0.01 -55~+150 Unit V V mA mA mA W W/ C o o C Thermal Data Par.