SST34HF162C - SST

SST34HF162C (SST34HF162C / SST34HF164C) 16 Mbit Dual-Bank Flash + 2/4 Mbit SRAM ComboMemory

The SST34HF162C/164C ComboMemory devices integrate a 1M x16 CMOS flash memory bank with either 128K x16 or 256K x16 CMOS SRAM memory bank in a multichip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better r.

Features

• Flash Organization: 1M x16
  – 16 Mbit: 12 Mbit + 4 Mbit
• Concurrent Operation
  – Read from or Write to SRAM while Erase/Program Flash
• SRAM Organization:
  – 2 Mbit:128K x16
  – 4 Mbit: 256K x16
• Single 2.7-3.3V Read and Write Operations
• Superior Reliability
  – Endurance: 100,000 Cycles (typical)
  – Greater than 100 years Data Retention
• Low Power Consumption: (typical values @ 5 MHz)
  – Active Current: Flash 10 mA (typical) SRAM 6 mA (typical)
  – Standby Current: 10 µA (typical)
• Sector-Erase Capability
  – Uniform 2 KWord sectors
• Block-Erase Capability
  – Uniform 32 KWord blocks
• Read Access.