SST34HF1601C - Silicon Storage Technology

SST34HF1601C (SST34HF16xxx) 16M-bit Concurrent SuperFlash + SRAM Combo Memory

The SST34HF16x1C/D/S ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16/256K x8, 256K x16/512 x8, or 512K x16/1024K x8 CMOS SRAM or pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the.

Features

• Flash Organization: 1M x16 or 2M x8
• Dual-Bank Architecture for Concurrent Read/Write Operation
  – 16 Mbit: 12 Mbit + 4 Mbit
• (P)SRAM Organization:
  – 2 Mbit: 128K x16 or 256K x8
  – 4 Mbit: 256K x16 or 512K x8
  – 8 Mbit: 512K x16 or 1024K x8
• Single 2.7-3.3V Read and Write Operations
• Superior Reliability
  – Endurance: 100,000 Cycles (typical)
  – Greater than 100 years Data Retention
• Low Power Consumption:
  – Active Current: 25 mA (typical)
  – Standby Current: 20 µA (typical)
• Hardware Sector Protection (WP#)
  – Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and.