It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C .
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSS8504DL
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSS8504AL |
Silikron |
MOSFET | |
2 | SSS8205 |
South Sea Semiconductor |
Dual N-Channel MOSFET | |
3 | SSS8N60 |
Tuofeng Semiconductor |
N-CHANNEL MOSFET | |
4 | SSS1004 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors | |
5 | SSS1004 |
GOOD-ARK |
N-Channel MOSFET | |
6 | SSS1004A7 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors | |
7 | SSS1004AL |
Silikron |
MOSFET | |
8 | SSS1004L |
Silikron |
MOSFET | |
9 | SSS10N60 |
Tuofeng |
N-CHANNEL MOSFET | |
10 | SSS10N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
11 | SSS10N60B |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | SSS10R20BFU |
Silikron |
MOSFET |