SSS10R20BFU - Silikron

SSS10R20BFU MOSFET

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID.

Features

 Low RDS(on) & FOM
 Extremely low switching loss
 Excellent stability and uniformity
 Fast switching and reverse body recovery
 150℃ operating temperature Applications
 Consumer electronic power supply
 Motor control
 Synchronous-rectification
 Isolated DC/DC convertor SOP-8 SSS10R20BFU Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching applicatio.