Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c .
.
SSS6N90A - Fairchild Semiconductor
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSS6N55 |
Samsung semiconductor |
(SSS6N60 / SSS6N55) N CHANNEL POWER MOSFETS |
|
| 2 | SSS6N60 |
Samsung semiconductor |
(SSS6N60 / SSS6N55) N CHANNEL POWER MOSFETS |
|
| 3 | SSS6N70A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 4 | SSS6N70A |
Sansung Semiconductor |
Advanced Power MOSFET |
|
| 5 | SSS6N80A |
Sansung Semiconductor |
Advanced Power MOSFET |
|
| 6 | SSS60N05 |
Samsung semiconductor |
(SSS60N05 / SSS60N06) N CHANNEL POWER MOSFETS |
|
| 7 | SSS60N06 |
Samsung semiconductor |
(SSS60N05 / SSS60N06) N CHANNEL POWER MOSFETS |
|
| 8 | SSS1004 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors |
|
| 9 | SSS1004 |
GOOD-ARK |
N-Channel MOSFET |
|
| 10 | SSS1004A7 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors |
|
| 11 | SSS1004AL |
Silikron |
MOSFET |
|
| 12 | SSS1004L |
Silikron |
MOSFET |
|