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SSS6N90A |
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| Part Number | SSS6N90A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 1.829 Ω (Typ.)
SSS6N90A
BVDSS = 900 V RDS(on) = 2.3 Ω ID = 3.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitiv... |
| Document |
 SSS6N90A Data Sheet
PDF 283.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSS6N90A |
Sansung Semiconductor |
Advanced Power MOSFET |
|
| 2 | SSS6N55 |
Samsung semiconductor |
(SSS6N60 / SSS6N55) N CHANNEL POWER MOSFETS |
|
| 3 | SSS6N60 |
Samsung semiconductor |
(SSS6N60 / SSS6N55) N CHANNEL POWER MOSFETS |
|
| 4 | SSS6N70A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 5 | SSS6N70A |
Sansung Semiconductor |
Advanced Power MOSFET |
|