www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) SSS2N60A BVDSS = 600 V RDS(on) = 5 Ω ID = 1.3 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Ab.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) SSS2N60A BVDSS = 600 V RDS(on) = 5 Ω ID = 1.3 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSS2N60 |
Tuofeng Semiconductor |
N-CHANNEL MOSFET | |
2 | SSS2N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
3 | SSS2301A |
South Sea Semiconductor |
P-Channel MOSFET | |
4 | SSS2302 |
South Sea Semiconductor |
N-Channel MOSFET | |
5 | SSS2308 |
South Sea Semiconductor |
N-Channel MOSFET | |
6 | SSS2309 |
South Sea Semiconductor |
P-Channel MOSFET | |
7 | SSS2321 |
South Sea Semiconductor |
P-Channel MOSFET | |
8 | SSS2323 |
South Sea Semiconductor |
P-Channel MOSFET | |
9 | SSS1004 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors | |
10 | SSS1004 |
GOOD-ARK |
N-Channel MOSFET | |
11 | SSS1004A7 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors | |
12 | SSS1004AL |
Silikron |
MOSFET |