SSS2308 - South Sea Semiconductor

SSS2308 N-Channel MOSFET

SSS2308 N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (m ) Max D SOT-23 80 @VGS = 4.5V 20V 2.3A 110 @VGS = 2.5V G S D FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Dra.

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 20 10 2.3 10 1.25 1.25 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 100 o C/W South Sea Semiconductor reserves the right.