It utilizes the latestprocessing techniquesto achieve the high cell density and reduces the on-resistancewith high repetitiveavalanche rating. These features combine to makethis design an extremely efficient and reliable devicefor use in power switching applicationand a wide varietyof otherapplications. AbsoluteMax Rating: Symbol ID @ TC = 25°C IDM PD @TC.
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latestprocessing techniquesto achieve the high cell density and reduces the on-resistancewith high repetitiveavalanche rating. These features combine to makethis design an extremely efficient and reliable devicefor use in power switching applicationand a wide varietyof otherapplications.
AbsoluteMax Rating:
Symbol ID @ TC = 25°C IDM .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSS1510 |
GOOD-ARK |
N-Channel MOSFET | |
2 | SSS1510 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors | |
3 | SSS1508A |
AMD |
(SSS1408A / SSS1508A) 8-Bit Multiplying D/A Converter | |
4 | SSS1004 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors | |
5 | SSS1004 |
GOOD-ARK |
N-Channel MOSFET | |
6 | SSS1004A7 |
Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors | |
7 | SSS1004AL |
Silikron |
MOSFET | |
8 | SSS1004L |
Silikron |
MOSFET | |
9 | SSS10N60 |
Tuofeng |
N-CHANNEL MOSFET | |
10 | SSS10N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
11 | SSS10N60B |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | SSS10R20BFU |
Silikron |
MOSFET |