SSPS920NE - SeCoS Halbleitertechnologie

SSPS920NE N-Channel MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. DFN3*3-8PP FEATURE.

Features

Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D Millimeter Min. Max. 3.0 BSC. 2.8 BSC. 0.20 0.35 0.65 BSC. REF. E F G Millimeter Min. Max. 0.08 0.25 2.3 BSC 0.7 0.9 PACKAGE INFORMATION Package DFN3
*3-8PP MPQ 3K Leader Size 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA = 25° C TA = 70° C ID IDM IS PD TJ, T.