The SSPR60N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SPR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SPR-8PP FEATURES Lower Gate Charge Simple .
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 60N03 = Date code PACKAGE INFORMATION Package MPQ SPR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 3.25 3.40 3.05 3.25 3.20 3.40 3.00 3.20 0.65 BSC. 2.40 2.60 REF. G H I J K L Millimeter Min. Max. 1.35 1.55 0.24 0.35 1.13 REF. 0.30 0.50 0.10 0.20 0.70 0.90 SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1@VGS=10V TC=25°C TC=100°C Pulsed Drain Current 2 Single Pu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSPR65N03-C |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
2 | SSPR100N03S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
3 | SSPR10N06-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
4 | SSPR10N10-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
5 | SSPR18N10 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
6 | SSPR18N10-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
7 | SSPR30N03S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
8 | SSPR32P03 |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
9 | SSPR32P03-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
10 | SSPR33N06S-C |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
11 | SSPR40N06 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
12 | SSPR42P03 |
SeCoS |
P-Channel Enhancement Mode Power MOSFET |