SSPR10N06-C - SeCoS

SSPR10N06-C N-Channel Enhancement Mode Power MOSFET

The SSPR10N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPR10N06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced High Cell Density Trench Technology  S.

Features

 Advanced High Cell Density Trench Technology
 Super Low Gate Charge
 Green Device Available MARKING SPR-8PP 10N06   = Date code PACKAGE INFORMATION Package MPQ Leader Size SPR-8PP 3K 13 inch S ORDER INFORMATION S Part Number Type S SSPR10N06-C Lead (Pb)-free and Halogen-free G REF. A B C D E F Millimeter Min. Max. 3.00 3.40 3.00 3.25 3.20 3.45 3.00 3.20 0.65 BSC. 2.39 2.60 REF. G H I J K L Millimeter Min. Max. 1.35 1.98 0.24 0.35 0.35 TYP. 0.60 TYP. 0.10 0.25 0.70 0.90 Mounting Pad Layout D D D D ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage .