The SSPR47N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSPR47N10S-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology .
Advanced High Cell Density Trench Technology
Super Low Gate Charge
Green Device Available
MARKING
SPR-8PP
47N10S
= Date code
PACKAGE INFORMATION
Package
MPQ
SPR-8PP
3K
Leader Size 13 inch
ORDER INFORMATION
S
Part Number
Type
S
SSPR47N10S-C Lead (Pb)-free and Halogen-free S
G
REF.
A B C D E F
Millimeter Min. Max. 3.00 3.40 3.00 3.25 3.20 3.45 3.00 3.20
0.65 BSC. 2.39 2.60
REF.
G H I J K L
Millimeter Min. Max. 1.35 1.98 0.24 0.35
0.35 TYP. 0.60 TYP. 0.10 0.25 0.70 0.90
Mounting Pad Layout
D D D D
ABSOLUTE MAXIMUM RATINGS TA=25°C unless otherwise specified)
Par.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSPR40N06 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
2 | SSPR42P03 |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
3 | SSPR46N03 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
4 | SSPR46N03-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
5 | SSPR48N04-C |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
6 | SSPR100N03S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
7 | SSPR10N06-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
8 | SSPR10N10-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
9 | SSPR18N10 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
10 | SSPR18N10-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
11 | SSPR30N03S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
12 | SSPR32P03 |
SeCoS |
P-Channel Enhancement Mode Power MOSFET |