Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 4.679 Ω (Typ.) 1 2 3 SSP3N90A BVDSS = 900 V RDS(on) = 6.2 Ω ID = 3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 4.679 Ω (Typ.) 1 2 3 SSP3N90A BVDSS = 900 V RDS(on) = 6.2 Ω ID = 3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM www.DataSheet4U.com Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSP3N80A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
2 | SSP3-277 |
HUBBELL |
3-Point LED Driver Surge Protector | |
3 | SSP3-480 |
HUBBELL |
3-Point LED Driver Surge Protector | |
4 | SSP3-480 |
Thomas |
3-Point LED Driver Surge Protector | |
5 | SSP-T |
ETC |
Surface Mount Quartz Crystal | |
6 | SSP-T5 |
ETC |
Surface Mount Quartz Crystal | |
7 | SSP-T7-F |
Seiko |
SMD Quartz Crystal | |
8 | SSP-T7-FL |
Seiko |
SMD Quartz Crystal | |
9 | SSP0430A-800480 |
Surenoo |
SPI TFT LCD Module | |
10 | SSP100 |
HALCRO |
(SSP80 / SSP100) Surround Sound Processor Manual | |
11 | SSP10N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
12 | SSP10N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET |