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SSP10N60A |
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| Part Number | SSP10N60A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.)
SSP10N60A
BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive A... |
| Document |
 SSP10N60A Data Sheet
PDF 639.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSP10N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | SSP100 |
HALCRO |
(SSP80 / SSP100) Surround Sound Processor Manual |
|
| 3 | SSP11N60C2 |
infineon |
Power Transistor |
|
| 4 | SSP1601 |
Samsung Electronics |
DSP |
|
| 5 | SSP1N50A |
Samsung Electronics |
Advanced Power MOSFET |
|