SSM5H90ATU - Toshiba

SSM5H90ATU Silicon N-Channel MOSFET

Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar SSM5H90ATU 1. Applications • High-Speed Switching 2. Features (1) Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 89 mΩ (max) (@VGS = 2.5 V) (2) 2.5-V gate drive voltage. 2.2. Diode F.

Features

(1) Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 89 mΩ (max) (@VGS = 2.5 V) (2) 2.5-V gate drive voltage. 2.2. Diode Features (1) Low reverse current: IR = 0.1 µA (typ.) (@VR = 30 V) 3. Packaging and Internal Circuit SSM5H90ATU 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain UFV 4. Absolute Maximum Ratings (Note) 4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage.