SSM5H16TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications • • • 1.8-V drive Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain curren.
nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2) Marking 5 4 Equivalent Ci.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSM5H11TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
2 | SSM5H12TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
3 | SSM5H14F |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
4 | SSM5H01TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
5 | SSM5H03TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
6 | SSM5H05TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
7 | SSM5H06FE |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
8 | SSM5H07TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
9 | SSM5H08TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode | |
10 | SSM5H90ATU |
Toshiba |
Silicon N-Channel MOSFET | |
11 | SSM5G01TU |
Toshiba Semiconductor |
MOSFET/Diode | |
12 | SSM5G02TU |
Toshiba Semiconductor |
DC-DC Converter |