SSM3K128TU - Toshiba Semiconductor

SSM3K128TU MOSFET

SSM3K128TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K128TU ○ High-Speed Switching Applications ○ Power Management Switch Applications • • 4.0V drive Low ON-resistance : Ron = 360mΩ (max) (@VGS = 4.0V) 0.65±0.05 2.1±0.1 1.7±0.1 UNIT: mm : Ron = 217mΩ (max) (@VGS = 10V) 2.0±0.1 1 3 Absolute Maximum Ratings (Ta = 25˚C) Characteristic .

Features

capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching time Turn-on time Turn-off time Symbol V (BR) DSS IDSS IGSS Vth ⏐Yfs⏐ RDS (ON) Ciss Coss Crss Qg Qgs Qgd ton toff VDSF VDS = 15 V, ID = 1.5 A VGS = 10 V VDD = 15 V, ID = 0.6 A, VGS = 0~4.0 V, RG = 10 Ω ID = -1.5 A, VGS = 0 V (Note2) VDS = 15 V, VGS = 0 V, f = 1 MHz Test Condition ID = 1 mA, VGS = 0 V VDS = 30 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 5 V, ID = 0.6 A ID = 0.6 A, VGS = 10 V ID = 0.6 A, VGS = 4.0 V (Note2) (Note2) (Note2) Min 30 ⎯ ⎯ 1.1 0.73 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯.