SSM3K105TU - Toshiba Semiconductor

SSM3K105TU Silicon N Channel MOS Type High Speed Switching Applications

www.DataSheet4U.com SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications • • 4V drive Low on-resistance: Unit: mm Ron = 480mΩ (max) (@VGS = 3.3V) Ron = 200mΩ (max) (@VGS = 4V) Ron = 110mΩ (max) (@VGS = 10V) 2.0±0.1 2.1±0.1 1.7±0.1 0.65±0.05 +0.1 0.3 -0.05 3 0.166±0.05 Absolute Maximum Ratings (.

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ppropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. 2 (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) Note: UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate thre.